They engineered a “buried channel” structure enabled by an oxygen plasma treatment (OPT) technique, which resulted in p-channel GaN transistors with a well-balanced performance matrix of threshold voltage for enhancement-mode operation, high ON/OFF current ratio, and high current driving capability. The team used a GaN power device technology platform in an attempt to tackle a problem associated with the gate-dielectric/channel interface. However, GaN CMOS technology has been hampered by the difficulties in implementing p-channel transistors and integrating them with n-channel ones. GaN is frequently used in power electronics, such as power converters and supplies. ![]() ![]() Researchers from the Hong Kong University of Science and Technology (HKUST) are working to increase the functionality available to wide bandgap gallium nitride (GaN) electronics.
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